STGP19NC60KD ST IGBTs

The STGP19NC60KD is an N-channel Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 600V drain-source voltage and 19A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and industrial applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives (AC induction motors, BLDC), and any 600V medium-power switching application requiring low conduction and switching losses in TO-220 package. In stock at HL Electronics – request a quote for fast delivery.