STGWT60H65DFB ST IGBTs
The STGWT60H65DFB is a 650V, 60A trench gate field-stop IGBT from STMicroelectronics in TO-247 through-hole package, featuring very low saturation voltage and co-packaged ultrafast freewheeling diode for high-efficiency power conversion. For selection, verify collector-emitter voltage of 650V, continuous collector current of 60A, low on-voltage drop (VCE(sat)) for reduced conduction losses, fast switching speed for high-frequency operation, and operating junction temperature up to 175°C. Features include trench gate field-stop technology for best-in-class performance, co-packaged ultrafast soft-recovery diode for low EMI, positive VCE(sat) temperature coefficient for easy paralleling, and extremely tight parameter distribution for consistent performance. Ideal for high-frequency power conversion in motor drives (AC induction motors, BLDC), power factor correction (PFC), uninterruptible power supplies (UPS), welding equipment, induction heating, photovoltaic inverters, and any 650V high-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 3.57 |
| 10+ | $ 3.08 |
| 300+ | $ 2.99 |
| 6000+ | $ 2.97 |
| 9000+ | $ 2.95 |
Technical Specifications
- Part No.STGWT60H65DFB
- Model STGWT60H65DFB
- Category Discrete Semiconductor Products > Transistors > IGBTs
- Manufacturer STMicroelectronics
- Series Trench Field Stop
- Packaging Tube
- Part Status Active
- Voltage - Collector Emitter Breakdown (Max) 650 V
- Current - Collector (Ic) (Max) 60 A (Tc)
- Vce(on) (Typ) @ Vge, Ic 1.6 V @ 15 V, 60 A
- Vge(th) (Min) @ Ic 5 V @ 250 µA
- Gate Charge (Qg) (Typ) @ Vgs 150 nC
- Input Capacitance (Cies) (Typ) @ Vce 2200 pF
- Power Dissipation (Max) 200 W (Tc)
- Features Ultrafast Diode
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Base Product Number STGWT60H65DFB
- RoHS ROHS3 Compliant
- Standard Package 600
