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STH3N150-2 ST Power MOSFET
The STH3N150-2 is an N-channel Power MOSFET from STMicroelectronics featuring 1500V drain-source voltage and 2.5A continuous drain current, in a high-voltage package. For selection, verify on-resistance for conduction losses, gate charge for switching performance, 100% avalanche tested, and operating junction temperature range. Features include very high voltage capability for demanding high-voltage applications, low input capacitance for fast switching, and Zener gate protection for enhanced reliability. Ideal for offline switching power supplies for three-phase industrial equipment operating from 400V-690V AC mains, high-voltage DC-DC converters, power factor correction circuits, industrial inverters, renewable energy systems (photovoltaic and wind), and any high-voltage power conversion requiring 1500V rating with reliable switching performance. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.96 |
| 100+ | $ 0.77 |
| 1000+ | $ 0.74 |
Technical Specifications
- Part No.STH3N150-2
- RoHS ROHS3 Compliant
- Model STH3N150-2
- Series PowerMESH™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 1000
- Vgs(th) (Max) @ Id 5V @ 250µA
- Base Product Number STH3N150
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 7 Ohm @ 1.5A, 10V
- Power Dissipation (Max) 160 W (Tc)
- Supplier Device Package D2PAK (TO-263-3)
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10V
- Drain to Source Voltage (Vdss) 1500 V
- Current - Continuous Drain (Id) 3 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1200 pF @ 25V