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STL210N4F7 ST Power MOSFET
The STL210N4F7 is an N-channel Power MOSFET from STMicroelectronics in PowerFLAT 5x6 surface-mount package, featuring 40V drain-source voltage and 120A continuous drain current with ultra-low on-resistance. For selection, verify on-resistance for extremely low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET F7 technology for industry-leading low on-resistance, high power density in compact PowerFLAT package, and low gate charge for reduced drive requirements. Ideal for high-efficiency switching applications including synchronous rectification in isolated DC-DC converters for telecom and server PSUs, motor control in automotive and industrial systems, battery management systems, and any 40V high-current power conversion requiring extremely low conduction losses in high-density surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.60 |
| 100+ | $ 0.50 |
| 750+ | $ 0.46 |
| 1500+ | $ 0.44 |
| 3000+ | $ 0.42 |
Technical Specifications
- Part No.STL210N4F7
- RoHS ROHS3 Compliant
- Model STL210N4F7
- Series STripFET™ F7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 3000
- Vgs(th) (Max) @ Id 4.5V @ 250µA
- Base Product Number STL210N4F7
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 2.2 mOhm @ 50A, 10V
- Power Dissipation (Max) 78 W (Tc)
- Supplier Device Package PowerFLAT (5x6)
- Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10V
- Drain to Source Voltage (Vdss) 40 V
- Current - Continuous Drain (Id) 110 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 2850 pF @ 25V