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STN1HNK60 ST Power MOSFET

The STN1HNK60 is an N-channel Power MOSFET with 600V drain-source voltage, 0.45A continuous current, and 8.5Ω max RDS(on) in a SOT-223 surface-mount package. For selection, verify gate charge and switching characteristics, low input capacitance, and -55°C to +150°C operation. Ideal for high-voltage switching applications, power supplies, and LED drivers in space-constrained designs. In stock at HL Electronics – request a quote for fast delivery.

STN1HNK60 - ST - main product image
Part No.:STN1HNK60
Brand:ST
Date Code:
Stock:47,629
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.21
100+ $ 0.16
1000+ $ 0.13
2000+ $ 0.12
4000+ $ 0.11

Technical Specifications

  • Part No.STN1HNK60
  • Model STN1HNK60
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series SuperMESH™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600V
  • Current - Continuous Drain (Id) 1A (Tc)
  • Drive Voltage (Max Rds On) 10V
  • Rds On (Max) @ Id, Vgs 8.5 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25V
  • Power Dissipation (Max) 3.3W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-223
  • Base Product Number STN1HNK60
  • RoHS ROHS3 Compliant
  • Standard Package 1000
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