STN1NK60Z ST Power MOSFET
The STN1NK60Z is an N-channel Zener-protected SuperMESH Power MOSFET from STMicroelectronics in SOT-223 surface-mount package, featuring 600V drain-source voltage, 300mA continuous drain current, and maximum on-resistance of 15Ω at VGS=10V . For selection, verify gate-source voltage rating, gate charge of 6.9nC typical for low switching losses, input capacitance of 94pF at 25V for fast switching, power dissipation of 3.3W, and operating junction temperature from -55°C to +150°C . Features include Zener gate protection for enhanced ruggedness against overvoltage spikes, integrated protection for electrostatic discharge, and surface-mount SOT-223 package for automated assembly. Ideal for switching applications including offline power supplies, auxiliary power supplies, LED lighting drivers, industrial power conversion, and high-voltage circuits requiring enhanced gate protection in space-constrained designs . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.26 |
| 100+ | $ 0.21 |
| 1000+ | $ 0.19 |
| 2000+ | $ 0.18 |
| 4000+ | $ 0.17 |
| 24000+ | $ 0.17 |
| 52000+ | $ 0.17 |
Technical Specifications
- Part No.STN1NK60Z
- Model STN1NK60Z
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series SuperMESH™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 1 A (Tc)
- Rds On (Max) @ Id, Vgs 8.5 Ohm @ 500mA, 10V
- Vgs(th) (Max) @ Id 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25V
- Power Dissipation (Max) 3.3 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number STN1NK60Z
- RoHS ROHS3 Compliant
- Standard Package 1000
