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STN2NF10 ST Power MOSFET
The STN2NF10 is an N-channel STripFET II Power MOSFET from STMicroelectronics in SOT-223 surface-mount package, featuring 100 V drain-source voltage and 2.4 A continuous drain current . For selection, verify on-resistance of 260 mΩ max at VGS=10V, logic-level gate drive capability for direct microcontroller interface, low gate charge for reduced switching losses, excellent avalanche ruggedness, and operating junction temperature from -55°C to +150°C . Features include high-density cell technology for low on-resistance, compact SOT-223 package for space-constrained designs, and manufacturing consistency for reliable performance. Ideal for DC-DC converters (buck or boost topologies), load switch applications, power path management, small motor drives (DC fans, pumps), relay replacement, and general-purpose low-voltage switching requiring 100 V rating with 2.4 A current capability in surface-mount package for automated assembly . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.25 |
| 100+ | $ 0.20 |
| 1000+ | $ 0.18 |
| 2000+ | $ 0.17 |
| 4000+ | $ 0.16 |
Technical Specifications
- Part No.STN2NF10
- Model STN2NF10
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 2 A (Tc)
- Rds On (Max) @ Id, Vgs 0.3 Ohm @ 1A, 10V
- Vgs(th) (Max) @ Id 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25V
- Power Dissipation (Max) 3.3 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number STN2NF10
- RoHS ROHS3 Compliant
- Standard Package 1000