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STN3P6F6 ST Power MOSFET

The STN3P6F6 is a P-channel Power MOSFET from STMicroelectronics in SOT-223 surface-mount package, featuring -60V drain-source voltage and -3A continuous drain current with logic-level gate drive. For selection, verify on-resistance for conduction losses, logic-level gate drive for direct microcontroller interface, low gate charge for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include STripFET technology for low on-resistance, compact SOT-223 package, and low gate charge for reduced drive requirements. Ideal for high-side load switching and power path management, battery protection circuits, low-voltage DC-DC converters, and any 60V P-channel switching application requiring logic-level gate drive. In stock at HL Electronics – request a quote for fast delivery.

STN3P6F6 - ST - main product image
Part No.:STN3P6F6
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.42
100+ $ 0.34
1000+ $ 0.30
2000+ $ 0.29
4000+ $ 0.27

Technical Specifications

  • Part No.STN3P6F6
  • Model STN3P6F6
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series STripFET™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60 V
  • Current - Continuous Drain (Id) 2 A (Tc)
  • Rds On (Max) @ Id, Vgs 0.12 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 9 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 300 pF @ 25V
  • Power Dissipation (Max) 1.6 W (Tc)
  • Operating Temperature 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-223
  • Base Product Number STN3P6F6
  • RoHS ROHS3 Compliant
  • Standard Package 1000
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