> Goods Details Page
> STN4NF06L
STN4NF06L ST Power MOSFET
The STN4NF06L is an N-channel Power MOSFET from STMicroelectronics in SOT-223 surface-mount package, featuring 60V drain-source voltage and 4A continuous drain current with logic-level gate drive. For selection, verify on-resistance for low conduction losses, logic-level gate drive compatible with 3.3V/5V microcontrollers, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET technology for low on-resistance, compact SOT-223 package for surface-mount assembly, and low gate charge for reduced drive requirements. Ideal for low-voltage DC-DC converters, load switching and power path management, battery management systems, motor control (DC motors, pumps), and any 60V switching application requiring logic-level gate drive capability in surface-mount SOT-223 package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.72 |
| 100+ | $ 0.60 |
| 1000+ | $ 0.56 |
| 2000+ | $ 0.53 |
| 4000+ | $ 0.51 |
| 24000+ | $ 0.51 |
| 52000+ | $ 0.50 |
Technical Specifications
- Part No.STN4NF06L
- Model STN4NF06L
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series STripFET™ II
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 4 A (Tc)
- Rds On (Max) @ Id, Vgs 0.1 Ω @ 2 A, 10 V
- Vgs(th) (Max) @ Id 2.5 V @ 250 µA
- Gate Charge (Qg) (Typ) @ Vgs 6 nC @ 5 V
- Input Capacitance (Ciss) (Typ) @ Vds 200 pF @ 25 V
- Power Dissipation (Max) 3.3 W (Tc)
- Features Logic Level Gate
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number STN4NF06L
- RoHS ROHS3 Compliant
- Standard Package 1000