STO36N60M6 ST Power MOSFET

The STO36N60M6 from ST is an N-channel 600 V, 30 A MDmesh™ M6 power MOSFET that lowers RDS(on) per area, cuts switching losses, and shrinks gate input resistance, all avalanche‑tested and Zener‑protected for ruggedness. For selection, 99 mΩ max on‑resistance at 10 V, 44.3 nC total gate charge, 1960 pF input capacitance, 4.75 V threshold, 230 W dissipation, and –55 °C to +150 °C operation suit hard‑switched bridges, PFC stages, and resonant converters with compact gate‑drive requirements. In use it powers DC‑DC modules, solar inverters, server/telecom SMPS, motor drives, welding equipment, and EV on‑board chargers where high efficiency and low conducted EMI are critical. The TO‑LL‑8 package fits space‑sensitive high‑density layouts. In stock at HL Electronics – request a quote for fast delivery.