STP110N7F6 ST Power MOSFET

The STP110N7F6 is an N-channel STripFET F7 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 68V drain-source voltage and 110A continuous drain current with ultra-low on-resistance for high-efficiency low-voltage switching. For selection, verify on-resistance for extremely low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET F7 technology for industry-leading low on-resistance, low gate charge for reduced drive requirements, and very low intrinsic capacitances for fast switching. Ideal for high-efficiency switching applications including synchronous rectification in isolated DC-DC converters for telecom and server PSUs, battery management systems (BMS) for high-current Li-Ion batteries, load switching for power distribution, motor control for BLDC motors, and any 68V high-current power conversion requiring extremely low conduction losses in TO-220 through-hole package. In stock at HL Electronics – request a quote for fast delivery.