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STP12NM50 ST Power MOSFET
The STP12NM50 is an N-channel MDmesh Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 500V drain-source voltage and 11A continuous drain current. For selection, verify on-resistance for low conduction losses, gate charge for optimized switching performance, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies, power factor correction stages, high-voltage DC-DC converters, LED lighting drivers, and any 500V switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.43 |
| 100+ | $ 1.22 |
| 1000+ | $ 1.17 |
| 15000+ | $ 1.17 |
| 30000+ | $ 1.16 |
Technical Specifications
- Part No.STP12NM50
- RoHS ROHS3 Compliant
- Model STP12NM50
- Series MDmesh™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Standard Package 1000
- Vgs(th) (Max) @ Id 4V @ 250µA
- Base Product Number STP12NM50
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 0.5 Ohm @ 5A, 10V
- Power Dissipation (Max) 100 W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10V
- Drain to Source Voltage (Vdss) 500 V
- Current - Continuous Drain (Id) 10 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 800 pF @ 25V