STP150N10F7 ST Power MOSFET
The STP150N10F7 is an N-channel STripFET F7 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 100V drain-source voltage and 120A continuous drain current with ultra-low on-resistance for high-efficiency low-voltage switching. For selection, verify on-resistance for extremely low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET F7 technology for industry-leading low on-resistance, low gate charge for reduced drive requirements, and very low intrinsic capacitances for fast switching. Ideal for high-efficiency switching applications including synchronous rectification in isolated DC-DC converters for telecom and server PSUs, battery management systems (BMS), load switching for power distribution, motor control, and any 100V high-current power conversion requiring extremely low conduction losses in TO-220 through-hole package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.15 |
| 100+ | $ 0.97 |
| 1000+ | $ 0.94 |
| 15000+ | $ 0.93 |
| 30000+ | $ 0.92 |
Technical Specifications
- Part No.STP150N10F7
- Model STP150N10F7
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series STripFET™ F7
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 110 A (Tc)
- Rds On (Typ) @ Id, Vgs 6.5 mΩ @ 55 A, 10 V
- Power Dissipation (Max) 200 W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Base Product Number STP150N10F7
- RoHS ROHS3 Compliant
- Standard Package 50
