STP150N10F7 ST Power MOSFET

The STP150N10F7 is an N-channel STripFET F7 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 100V drain-source voltage and 120A continuous drain current with ultra-low on-resistance for high-efficiency low-voltage switching. For selection, verify on-resistance for extremely low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET F7 technology for industry-leading low on-resistance, low gate charge for reduced drive requirements, and very low intrinsic capacitances for fast switching. Ideal for high-efficiency switching applications including synchronous rectification in isolated DC-DC converters for telecom and server PSUs, battery management systems (BMS), load switching for power distribution, motor control, and any 100V high-current power conversion requiring extremely low conduction losses in TO-220 through-hole package. In stock at HL Electronics – request a quote for fast delivery.

STP150N10F7 - ST - main product image
Part No.:STP150N10F7
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.15
100+ $ 0.97
1000+ $ 0.94
15000+ $ 0.93
30000+ $ 0.92

Technical Specifications

  • Part No.STP150N10F7
  • Model STP150N10F7
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series STripFET™ F7
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100 V
  • Current - Continuous Drain (Id) 110 A (Tc)
  • Rds On (Typ) @ Id, Vgs 6.5 mΩ @ 55 A, 10 V
  • Power Dissipation (Max) 200 W (Tc)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220
  • Base Product Number STP150N10F7
  • RoHS ROHS3 Compliant
  • Standard Package 50
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