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STP15N80K5 ST Power MOSFET
The STP15N80K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 800V drain-source voltage, 14A continuous drain current, and 0.375Ω max on-resistance at VGS=10V. For selection, verify built-in back-to-back Zener diodes for ESD protection, 100% avalanche tested with 150mJ single pulse avalanche energy, ultra-low gate charge of 32nC, and operating junction temperature from -55°C to +150°C. Features include MDmesh K5 technology for industry's lowest RDS(on) x area, ultra-low gate charge for simplified drive requirements, and Zener gate protection for enhanced reliability. Ideal for high-efficiency offline switching power supplies (SMPS) for industrial equipment, power factor correction (PFC) stages, high-voltage DC-DC converters, renewable energy inverters, and any 800V high-power switching requiring low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.46 |
| 100+ | $ 1.24 |
| 1000+ | $ 1.20 |
Technical Specifications
- Part No.STP15N80K5
- Model STP15N80K5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 800 V
- Current - Continuous Drain (Id) 14 A (Tc)
- Rds On (Max) @ Id, Vgs 0.375 Ω @ 7 A, 10 V
- Gate Charge (Qg) (Typ) @ Vgs 32 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 1100 pF @ 100 V
- Power Dissipation (Max) 190 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220
- Base Product Number STP15N80K5
- RoHS ROHS3 Compliant
- Standard Package 50