STP24N60M2 ST Power MOSFET

The STP24N60M2 is an N-channel MDmesh M2 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 600V drain-source voltage and 18A continuous drain current for high-efficiency switching applications. For selection, verify on-resistance for low conduction losses, gate charge for optimized switching performance, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh M2 technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), and any 600V medium-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.

STP24N60M2 - ST - main product image
Part No.:STP24N60M2
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.87
100+ $ 0.70
1000+ $ 0.67
15000+ $ 0.66
30000+ $ 0.66

Technical Specifications

  • Part No.STP24N60M2
  • Model STP24N60M2
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series MDmesh™ II
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600 V
  • Current - Continuous Drain (Id) 18 A (Tc)
  • Rds On (Typ) @ Id, Vgs 0.19 Ω @ 9 A, 10 V
  • Power Dissipation (Max) 130 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220
  • Base Product Number STP24N60M2
  • RoHS ROHS3 Compliant
  • Standard Package 50
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