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STP26NM60N ST Power MOSFET
The STP26NM60N is an N-channel MDmesh II Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 600V drain-source voltage and 20A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, excellent dv/dt capability, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh II technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS), power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives, and any 600V medium-to-high power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.89 |
| 100+ | $ 0.71 |
| 1000+ | $ 0.68 |
| 15000+ | $ 0.68 |
| 30000+ | $ 0.68 |
Technical Specifications
- Part No.STP26NM60N
- Model STP26NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 20 A (Tc)
- Rds On (Max) @ Id, Vgs 0.165 Ohm @ 10A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1560 pF @ 50V
- Power Dissipation (Max) 150 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Base Product Number STP26NM60N
- RoHS ROHS3 Compliant
- Standard Package 1000