STP34NM60N ST Power MOSFET

The STP34NM60N is an N-channel MDmesh Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 600V drain-source voltage and 28A continuous drain current for high-efficiency power conversion. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives, and any 600V high-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.

STP34NM60N - ST - main product image
Part No.:STP34NM60N
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 6.28
100+ $ 5.61
1000+ $ 5.46
15000+ $ 5.43
30000+ $ 5.38

Technical Specifications

  • Part No.STP34NM60N
  • Model STP34NM60N
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series MDmesh™ II
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600 V
  • Current - Continuous Drain (Id) 29 A (Tc)
  • Rds On (Typ) @ Id, Vgs 0.092 Ω @ 14.5 A, 10 V
  • Power Dissipation (Max) 210 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220
  • Base Product Number STP34NM60N
  • RoHS ROHS3 Compliant
  • Standard Package 50
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