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STP55NF06FP ST Power MOSFET
The STP55NF06FP is an N-channel Power MOSFET from STMicroelectronics in TO-220FP fully insulated package, featuring 60V drain-source voltage and 55A continuous drain current. For selection, verify on-resistance for low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET technology for low on-resistance, fully insulated TO-220FP package for simplified thermal management, and low gate charge for reduced drive requirements. Ideal for low-voltage high-current switching applications including synchronous rectification in isolated DC-DC converters, motor control in automotive and industrial systems, battery management, power supplies, and any 60V high-efficiency power conversion requiring simplified thermal management. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.44 |
| 100+ | $ 0.35 |
| 1000+ | $ 0.34 |
| 15000+ | $ 0.34 |
| 30000+ | $ 0.33 |
Technical Specifications
- Part No.STP55NF06FP
- Model STP55NF06FP
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series STripFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60 V
- Current - Continuous Drain (Id) 55 A (Tc)
- Rds On (Max) @ Id, Vgs 0.015 Ohm @ 27.5A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25V
- Power Dissipation (Max) 30 W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220FP-3
- Base Product Number STP55NF06
- RoHS ROHS3 Compliant
- Standard Package 1000