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STP55NF06L ST Power MOSFET

The STP55NF06L is an N-channel Power MOSFET with logic-level gate drive from STMicroelectronics in TO-220 through-hole package, featuring 60V drain-source voltage and 55A continuous drain current. For selection, verify on-resistance for low conduction losses, logic-level gate drive compatible with 5V microcontrollers, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +175°C. Features include STripFET technology for low on-resistance, low gate charge for reduced drive requirements, and logic-level gate drive for simple interface with microcontrollers. Ideal for low-voltage DC-DC converters, battery management systems, load switching, power supplies, motor control (DC motors, pumps), and any 60V high-efficiency switching application requiring direct microcontroller drive. In stock at HL Electronics – request a quote for fast delivery.

STP55NF06L - ST - main product image
Part No.:STP55NF06L
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.51
100+ $ 0.41
1000+ $ 0.39
15000+ $ 0.39
30000+ $ 0.38

Technical Specifications

  • Part No.STP55NF06L
  • Model STP55NF06L
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series STripFET™
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60 V
  • Current - Continuous Drain (Id) 55 A (Tc)
  • Rds On (Max) @ Id, Vgs 0.015 Ohm @ 27.5A, 10V
  • Vgs(th) (Max) @ Id 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25V
  • Power Dissipation (Max) 100 W (Tc)
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220-3
  • Base Product Number STP55NF06L
  • RoHS ROHS3 Compliant
  • Standard Package 1000
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