STP5NK100Z ST Power MOSFET
The STP5NK100Z is an N-channel Zener-protected SuperMESH Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 1000V (1kV) drain-source voltage and 3.5A continuous drain current. For selection, verify built-in back-to-back Zener diodes for ESD protection up to 3000V HBM, 100% avalanche tested for ruggedness, on-resistance for conduction losses, low gate charge for minimized switching losses, excellent dv/dt capability, and operating junction temperature from -55°C to +150°C. Features include integrated Zener protection eliminating external components, very low intrinsic capacitances for fast switching, and SuperMESH technology for best-in-class on-resistance. Ideal for offline switching power supplies for telecom and industrial equipment, high-voltage DC-DC converters, power factor correction stages for three-phase applications, LED lighting drivers, and any 1kV switching application requiring enhanced ESD/gate protection. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.96 |
| 100+ | $ 0.81 |
| 1000+ | $ 0.78 |
| 15000+ | $ 0.78 |
| 30000+ | $ 0.77 |
Technical Specifications
- Part No.STP5NK100Z
- RoHS ROHS3 Compliant
- Model STP5NK100Z
- Series SuperMESH™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Standard Package 1000
- Vgs(th) (Max) @ Id 4.5V @ 100µA
- Base Product Number STP5NK100Z
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 3.6 Ohm @ 1.8A, 10V
- Power Dissipation (Max) 125 W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10V
- Drain to Source Voltage (Vdss) 1000 V
- Current - Continuous Drain (Id) 3.6 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 730 pF @ 25V
