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STP6N95K5 ST Power MOSFET

The STP6N95K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in TO-220 through-hole package, featuring 950V drain-source voltage, 4.5A continuous drain current, and 1.95Ω max on-resistance at VGS=10V. For selection, verify built-in back-to-back Zener diodes for ESD protection, 100% avalanche tested for ruggedness, ultra-low gate charge for minimized switching losses, and operating junction temperature from -55°C to +150°C. Features include MDmesh K5 technology for industry's lowest RDS(on) x area, ultra-low gate charge for simplified drive requirements, and Zener gate protection for enhanced reliability. Ideal for ultra-high voltage switching applications including offline power supplies for industrial equipment, high-voltage DC-DC converters, LED lighting drivers, power factor correction (PFC) stages, and any 950V low-to-medium power switching requiring low conduction losses. In stock at HL Electronics – request a quote for fast delivery.

STP6N95K5 - ST - main product image
Part No.:STP6N95K5
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.71
100+ $ 0.57
1000+ $ 0.54

Technical Specifications

  • Part No.STP6N95K5
  • Model STP6N95K5
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series MDmesh™ K5
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 950 V
  • Current - Continuous Drain (Id) 5.5 A (Tc)
  • Rds On (Max) @ Id, Vgs 1.3 Ω @ 2.75 A, 10 V
  • Gate Charge (Qg) (Typ) @ Vgs 13 nC @ 10 V
  • Input Capacitance (Ciss) (Typ) @ Vds 260 pF @ 100 V
  • Power Dissipation (Max) 20 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-220
  • Base Product Number STP6N95K5
  • RoHS ROHS3 Compliant
  • Standard Package 50
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