STP75NF75 ST Power MOSFET
The STP75NF75 is an N-channel STripFET II Power MOSFET from STMicroelectronics in TO-220 package, featuring 75V drain-source voltage, 80A continuous drain current, and ultra-low on-resistance of 0.0095Ω (9.5mΩ) typical at VGS=10V . For selection, verify gate charge characteristics for minimized switching losses, very low intrinsic capacitances for fast switching, excellent dv/dt capability, 100% avalanche tested for ruggedness, total power dissipation of 300W with proper heatsinking, and operating junction temperature from -55°C to +175°C . Features include advanced STripFET process technology for improved efficiency and power density, low gate drive requirement for simple drive circuits, and availability in multiple packages including TO-220, TO-220FP, and D2PAK . Ideal for high-efficiency, high-frequency isolated DC-DC converters in telecom and computer applications, switching power supplies, motor control, automotive systems, battery management, and any power switching application requiring ultra-low conduction losses and high current capability . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 100+ | $ 0.37 |
| 1000+ | $ 0.35 |
Technical Specifications
- Part No.STP75NF75
- Model STP75NF75
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series STripFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75 V
- Current - Continuous Drain (Id) 75 A (Tc)
- Rds On (Max) @ Id, Vgs 0.011 Ohm @ 37A, 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3700 pF @ 25V
- Power Dissipation (Max) 230 W (Tc)
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-220-3
- Base Product Number STP75NF75
- RoHS ROHS3 Compliant
- Standard Package 1000
