STP8N120K5 ST Power MOSFET
The STP8N120K5 from STMicroelectronics is a 1200 V N‑channel MDmesh™ K5 power MOSFET in a TO‑220 package, purpose‑built for high‑voltage switching applications requiring superior power density and efficiency. For selection, it delivers 6 A continuous drain current, 130 W dissipation, a maximum on‑resistance of 2.00 Ω (1.65 Ω typical) at 10 V, and an ultra‑low gate charge of just 13.7 nC, minimizing drive losses at high frequency. It features industry‑best figure of merit, 100 % avalanche testing, and integrated Zener protection for enhanced ruggedness across a –55 °C to +150 °C junction range. In application, it excels as the primary high‑side switch in flyback and PFC circuits for switch‑mode power supplies, motor control inverters, LED lighting drivers, automotive systems, and industrial power converters where reliable, high‑voltage switching is essential. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.42 |
| 100+ | $ 1.21 |
| 1000+ | $ 1.16 |
Technical Specifications
- Part No.STP8N120K5
- ECCN EAR99
- RoHS ROHS3 Compliant
- Grade Industrial
- HTSUS 8541.29.0055
- REACH REACH Unaffected
- Series MDmesh™ K5
- Category Discrete > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±30V
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Qg (Max) @ Vgs 13.7 nC @ 10 V
- Standard Package 50
- Vgs(th) (Max) @ Id 5V @ 100µA
- Base Product Number STP8N120K5
- Operating Temperature -55°C ~ 150°C (TJ)
- Power Dissipation (Max) 130W (Tc)
- Rds(on) (Max) @ Id, Vgs 2Ω @ 2.5A, 10V
- Supplier Device Package TO-220
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds 505 pF @ 100 V
- Vds (Drain-to-Source Voltage) [Vdss] 1200 V
- Id (Continuous Drain Current) @ 25°C 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Reverse Transfer Capacitance (Crss) (Typ) 0.4 pF
