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STQ1HNK60R-AP ST Power MOSFET

The STQ1HNK60R-AP is an N-channel Power MOSFET from STMicroelectronics in TO-92 through-hole package, featuring 600V drain-source voltage and 0.3A continuous drain current for low-power switching applications. For selection, verify on-resistance for conduction losses, gate charge for switching performance, very low intrinsic capacitances, 100% avalanche tested, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for high efficiency, low gate charge for simplified drive requirements, and through-hole TO-92 package for easy prototyping and low-cost assembly. Ideal for low-power offline switching power supplies (SMPS), auxiliary power supplies, LED lighting drivers, AC-DC adapters, flyback converters, and any 600V low-power switching application requiring through-hole package. In stock at HL Electronics – request a quote for fast delivery.

STQ1HNK60R-AP - ST - main product image
Part No.:STQ1HNK60R-AP
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.25
100+ $ 0.19
1000+ $ 0.17
2000+ $ 0.16
30000+ $ 0.16
40000+ $ 0.15

Technical Specifications

  • Part No.STQ1HNK60R-AP
  • Model STQ1HNK60R-AP
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series SuperMESH™
  • Packaging Ammo Pack
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 600 V
  • Current - Continuous Drain (Id) 1 A (Tc)
  • Rds On (Max) @ Id, Vgs 8.5 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs 12 nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 25V
  • Power Dissipation (Max) 3.3 W (Tc)
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-92-3
  • Base Product Number STQ1HNK60R
  • RoHS ROHS3 Compliant
  • Standard Package 2000
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