STR2N2VH5 ST Power MOSFET

The STR2N2VH5 is an N-channel STripFET H5 Power MOSFET from STMicroelectronics in SOT-23 surface-mount package, featuring 20V drain-source voltage, 2.3A continuous drain current, and ultra-low on-resistance of 0.025Ω typical (25mΩ) at VGS=4.5V . For selection, verify very low on-state resistance for minimized conduction losses, Figure of Merit (FoM) among the best in its class, gate charge for fast switching, and operating junction temperature from -55°C to +150°C . Features include STripFET H5 technology for high efficiency, very low RDS(on) for reduced power dissipation, and extremely low package footprint for space-constrained designs. Ideal for battery management systems in portable electronics, load switching for power distribution (e.g., battery isolation in wearables), DC-DC converters, power multiplexing circuits, low-voltage industrial automation, and any low-voltage high-efficiency switching application requiring ultra-low on-resistance in compact SOT-23 package for automated assembly . In stock at HL Electronics – request a quote for fast delivery.