STS1DNC45 ST Power MOSFET
The STS1DNC45 is an N-channel Power MOSFET from STMicroelectronics in SO-8 surface-mount package, featuring 450V drain-source voltage and 1A continuous drain current. For selection, verify on-resistance for conduction losses, gate charge for switching performance, 100% avalanche tested, and operating junction temperature range. Features include high voltage capability in compact SO-8 package, low gate charge for simplified drive requirements, and surface-mount package for automated assembly. Ideal for low-power offline switching power supplies (SMPS) for AC-DC adapters, auxiliary power supplies in industrial equipment, LED lighting drivers, flyback converters, and any 450V low-power switching application requiring high voltage rating in space-saving SO-8 package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.52 |
| 100+ | $ 0.44 |
| 1250+ | $ 0.40 |
| 2500+ | $ 0.38 |
| 37500+ | $ 0.38 |
| 50000+ | $ 0.37 |
Technical Specifications
- Part No.STS1DNC45
- RoHS ROHS3 Compliant
- Model STS1DNC45
- Series SuperMESH™
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type 2 N-Channel (Dual)
- Packaging Tape & Reel (TR)
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Surface Mount
- Standard Package 2500
- Vgs(th) (Max) @ Id 3.7V @ 250µA
- Base Product Number STS1DNC45
- Operating Temperature 150°C (TJ)
- Rds On (Max) @ Id, Vgs 4.5 Ohm @ 250mA, 10V
- Power Dissipation (Max) 1.6 W (Tc)
- Supplier Device Package 8-SOIC
- Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10V
- Drain to Source Voltage (Vdss) 450 V
- Current - Continuous Drain (Id) 0.5 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 120 pF @ 25V
