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STS2DNF30L ST Power MOSFET

The STS2DNF30L is a dual N-channel Power MOSFET from STMicroelectronics in SO-8 package, featuring 30V drain-source voltage and logic-level gate drive with low on-resistance. For selection, verify continuous drain current per channel, on-resistance for low conduction losses, logic-level gate drive compatible with 3.3V/5V microcontrollers, low gate charge for fast switching, and operating junction temperature suitable for power applications. Features include two MOSFETs in one package for space-saving designs, STripFET technology for low on-resistance, and dual configuration for half-bridge or parallel applications. Ideal for low-voltage DC-DC converters, load switches, power management in portable devices, battery protection circuits, and any application requiring two 30V MOSFETs. In stock at HL Electronics – request a quote for fast delivery.

STS2DNF30L - ST - main product image
Part No.:STS2DNF30L
Brand:ST
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.45
100+ $ 0.35
1250+ $ 0.30
2500+ $ 0.29
37500+ $ 0.29
50000+ $ 0.28

Technical Specifications

  • Part No.STS2DNF30L
  • Model STS2DNF30L
  • Category Discrete Semiconductor Products > Transistors > MOSFETs
  • Manufacturer STMicroelectronics
  • Series STripFET™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type 2 N-Channel (Dual)
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30 V
  • Current - Continuous Drain (Id) 2 A (Tc)
  • Rds On (Max) @ Id, Vgs 0.085 Ohm @ 1A, 10V
  • Vgs(th) (Max) @ Id 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds 175 pF @ 25V
  • Power Dissipation (Max) 1.6 W (Tc)
  • Operating Temperature 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package 8-SOIC
  • Base Product Number STS2DNF30L
  • RoHS ROHS3 Compliant
  • Standard Package 2500
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