STU7N105K5 ST Power MOSFET
The STU7N105K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in TO-251 (IPAK) through-hole package, featuring 1050 V (1.05 kV) drain-source voltage and 5 A continuous drain current. For selection, verify on-resistance optimized for high-efficiency conversion, gate charge for minimized switching losses, very low intrinsic capacitances, excellent dv/dt ruggedness, 100% avalanche tested, and operating junction temperature from -55°C to +150°C. Features include MDmesh K5 technology for best-in-class on-resistance per area, fast switching for reduced losses, and Zener gate protection. Ideal for ultra-high voltage switching applications including offline power supplies (SMPS) for industrial and telecom, three-phase industrial power supplies, auxiliary power converters, high-voltage LED drivers, renewable energy inverters (solar strings), and any power conversion requiring 1050 V rating with 5 A current capability in through-hole TO-251 package for robust PCB mounting. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.97 |
| 100+ | $ 0.81 |
| 750+ | $ 0.75 |
| 1500+ | $ 0.71 |
| 3000+ | $ 0.68 |
Technical Specifications
- Part No.STU7N105K5
- Model STU7N105K5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1050 V
- Current - Continuous Drain (Id) 3 A (Tc)
- Rds On (Max) @ Id, Vgs 2.5 Ohm @ 1.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 470 pF @ 100V
- Power Dissipation (Max) 90 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package IPAK (TO-251-3)
- Base Product Number STU7N105K5
- RoHS ROHS3 Compliant
- Standard Package 1000
