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STW12N120K5 ST Power MOSFET
The STW12N120K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 1200V drain-source voltage and 9A continuous drain current for ultra-high voltage switching applications. For selection, verify on-resistance for low conduction losses, gate charge for minimized switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh K5 technology for best-in-class on-resistance per area, fast switching for reduced losses, and Zener gate protection for enhanced reliability. Ideal for ultra-high voltage switching applications including offline power supplies for industrial equipment, high-voltage DC-DC converters, power factor correction (PFC) stages for three-phase applications, renewable energy inverters (solar strings), and any 1200V high-power switching requiring low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.89 |
| 10+ | $ 2.49 |
| 600+ | $ 2.42 |
Technical Specifications
- Part No.STW12N120K5
- Model STW12N120K5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) 9 A (Tc)
- Rds On (Max) @ Id, Vgs 0.65 Ω @ 4.5 A, 10 V
- Power Dissipation (Max) 80 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Base Product Number STW12N120K5
- RoHS ROHS3 Compliant
- Standard Package 600