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STW24N60M2 ST Power MOSFET
The STW24N60M2 is an N-channel MDmesh II Plus low Qg Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 600V drain-source voltage, 18A continuous drain current, and typical on-resistance of 0.168Ω . For selection, verify gate charge for optimized switching performance, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C . Features include MDmesh II Plus technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), and motor drives. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.84 |
| 10+ | $ 0.64 |
| 600+ | $ 0.62 |
| 12000+ | $ 0.61 |
| 18000+ | $ 0.61 |
Technical Specifications
- Part No.STW24N60M2
- RoHS ROHS3 Compliant
- Model STW24N60M2
- Series MDmesh™ II Plus
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tube
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Standard Package 600
- Vgs(th) (Max) @ Id 4V @ 250µA
- Base Product Number STW24N60M2
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 0.19 Ohm @ 9A, 10V
- Power Dissipation (Max) 170 W (Tc)
- Supplier Device Package TO-247-3
- Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10V
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 18 A (Tc)
- Input Capacitance (Ciss) (Max) @ Vds 1450 pF @ 100V