STW26NM60N ST Power MOSFET
The STW26NM60N is an N-channel MDmesh Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 600V drain-source voltage and 20A continuous drain current for high-efficiency power conversion. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives, and any 600V medium-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.99 |
| 10+ | $ 0.76 |
| 600+ | $ 0.73 |
Technical Specifications
- Part No.STW26NM60N
- Model STW26NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 20 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.19 Ω @ 10 A, 10 V
- Power Dissipation (Max) 160 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Base Product Number STW26NM60N
- RoHS ROHS3 Compliant
- Standard Package 600
