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STW34N65M5 ST Power MOSFET
The STW34N65M5 is an N-channel MDmesh V Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 650V drain-source voltage, 28A continuous drain current, and 0.11Ω typical on-resistance at VGS=10V . For selection, verify gate charge of 62.5nC at 10V, input capacitance of 2700pF at 100V, 100% avalanche tested for ruggedness, total power dissipation of 190W, and operating junction temperature up to 150°C . Features include MDmesh V technology for world-leading on-resistance per area, low gate charge for simplified drive requirements, very low output capacitance for improved efficiency, and excellent switching performance for high-frequency operation. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), and any 650V high-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.98 |
| 10+ | $ 2.57 |
| 600+ | $ 2.49 |
| 12000+ | $ 2.48 |
| 18000+ | $ 2.46 |
Technical Specifications
- Part No.STW34N65M5
- Model STW34N65M5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) 28 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.09 Ω @ 14 A, 10 V
- Vgs(th) (Max) @ Id 5 V @ 250 µA
- Gate Charge (Qg) (Typ) @ Vgs 62.5 nC @ 10 V
- Input Capacitance (Ciss) (Typ) @ Vds 2700 pF @ 100 V
- Power Dissipation (Max) 190 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Base Product Number STW34N65M5
- RoHS ROHS3 Compliant
- Standard Package 600