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STW34NM60N ST Power MOSFET
The STW34NM60N is an N-channel MDmesh II Power MOSFET from STMicroelectronics in TO-247 package, featuring 600V drain-source voltage and 29A continuous drain current with 0.092Ω typical on-resistance . For selection, verify low gate charge, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh II technology for best-in-class on-resistance per area, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives, and any 600V switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 3.10 |
| 10+ | $ 2.67 |
| 600+ | $ 2.59 |
Technical Specifications
- Part No.STW34NM60N
- Model STW34NM60N
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 29 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.092 Ohm @ 14.5 A, 10 V
- Power Dissipation (Max) 250 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Base Product Number STW34NM60N
- RoHS ROHS3 Compliant
- Standard Package 600