STW48N60M2 ST Power MOSFET
The STW48N60M2 is an N-channel MDmesh M2 Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 600V drain-source voltage, 42A continuous drain current, and low on-resistance for high-efficiency power conversion. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh M2 technology for best-in-class on-resistance per area with fast switching, low gate charge for simplified drive requirements, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, uninterruptible power supplies (UPS), motor drives, and any 600V high-power switching application requiring low conduction and switching losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.04 |
| 10+ | $ 0.86 |
| 600+ | $ 0.83 |
Technical Specifications
- Part No.STW48N60M2
- Model STW48N60M2
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ II
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600 V
- Current - Continuous Drain (Id) 42 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.065 Ω @ 21 A, 10 V
- Power Dissipation (Max) 250 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Base Product Number STW48N60M2
- RoHS ROHS3 Compliant
- Standard Package 600
