STW70N60DM2 ST Power MOSFET

The STW70N60DM2 is an N-channel MDmesh DM2 fast recovery diode series Power MOSFET from STMicroelectronics in TO-247 through-hole package, featuring 600V drain-source voltage and 70A continuous drain current for high-efficiency switching applications with demanding dv/dt rate. For selection, verify very low recovery charge (Qrr) and time (trr) combined with low RDS(on), extremely low gate charge and input capacitance for fast switching, very low output capacitance for improved efficiency, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include fast-recovery body diode ideal for bridge topologies and zero-voltage switching (ZVS) phase-shift converters, MDmesh DM2 technology optimized for demanding switching applications. Ideal for high-efficiency isolated DC-DC converters for telecom and server power supplies requiring fast body diode recovery, high-power industrial motor drives and inverters, renewable energy inverters (solar and wind), UPS systems, welding equipment, and any 600V high-power demanding switching application requiring excellent switching performance with fast body diode recovery. In stock at HL Electronics – request a quote for fast delivery.