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STW8N120K5 ST Power MOSFET
The STW8N120K5 is an N-channel MDmesh K5 Power MOSFET from STMicroelectronics in TO-247-3 through-hole package, featuring 1200V drain-source voltage, 6A continuous drain current, 2Ω max on-resistance at VGS=10V, and 130W power dissipation . For selection, verify gate charge of 13.7nC at 10V, input capacitance of 505pF at 100V, threshold voltage of 5V at 100µA, and operating junction temperature from -55°C to +150°C . Features include MDmesh K5 technology for best-in-class on-resistance per area, fast switching for reduced losses, and Zener gate protection for enhanced reliability. Ideal for ultra-high voltage switching applications including offline power supplies for industrial equipment operating from high-voltage mains, power factor correction stages for three-phase applications, high-voltage DC-DC converters, renewable energy inverters (photovoltaic), and any 1200V high-power switching requiring low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.24 |
| 10+ | $ 1.93 |
| 600+ | $ 1.88 |
Technical Specifications
- Part No.STW8N120K5
- Model STW8N120K5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ K5
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 1200 V
- Current - Continuous Drain (Id) 6 A (Tc)
- Rds On (Max) @ Id, Vgs 2 Ohm @ 2.5A, 10V
- Vgs(th) (Max) @ Id 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 13.7 nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 505 pF @ 100V
- Power Dissipation (Max) 130 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247
- Base Product Number STW8
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS ROHS3 Compliant
- Standard Package 600