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STWA57N65M5 ST Power MOSFET
The STWA57N65M5 is an N-channel MDmesh V Power MOSFET from STMicroelectronics, featuring 650V drain-source voltage and high continuous drain current for high-efficiency power conversion in demanding switching applications. For selection, verify on-resistance for low conduction losses, gate charge for low switching losses, very low intrinsic capacitances for fast switching, 100% avalanche tested for ruggedness, and operating junction temperature from -55°C to +150°C. Features include MDmesh V technology for world-leading on-resistance per area, excellent switching performance for high-frequency operation, and very low output capacitance for improved efficiency. Ideal for high-efficiency offline switching power supplies (SMPS) for telecom and server applications, power factor correction (PFC) stages, high-voltage DC-DC converters, EV charging stations, and any 650V high-power switching requiring ultra-low conduction losses. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 4.98 |
| 10+ | $ 4.45 |
| 600+ | $ 4.33 |
| 12000+ | $ 4.31 |
| 18000+ | $ 4.27 |
Technical Specifications
- Part No.STWA57N65M5
- Model STWA57N65M5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer STMicroelectronics
- Series MDmesh™ V
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 650 V
- Current - Continuous Drain (Id) 42 A (Tc)
- Rds On (Typ) @ Id, Vgs 0.063 Ω @ 21 A, 10 V
- Power Dissipation (Max) 250 W (Tc)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247-3
- Base Product Number STWA57N65M5
- RoHS ROHS3 Compliant
- Standard Package 600