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SUP85N10-10-E3 VISHAY Power MOSFET

SUP85N10-10-E3 - VISHAY - main product image
Part No.:SUP85N10-10-E3
Brand:VISHAY
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.75
10+ $ 1.46
500+ $ 1.41
10000+ $ 1.40
15000+ $ 1.39

Technical Specifications

  • Part No.SUP85N10-10-E3
  • Series TrenchFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Cut Tape (CT)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 3V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 10.5 mOhm @ 30A, 10V
  • Power Dissipation (Max) 3.75W (Ta), 250W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 160nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 6550pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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