TIP107 ST Bipolar (BJT)
The TIP107 is a PNP Darlington power transistor from STMicroelectronics in TO-220 through-hole package, featuring 100V collector-emitter voltage, 8A continuous collector current, and very high DC current gain (hFE) of 1000 minimum due to Darlington configuration. For selection, verify collector-emitter saturation voltage of 2.5V max at 8A, built-in clamp diode for inductive load protection, power dissipation of 80W with proper heatsinking, and operating junction temperature from -65°C to +150°C. Features include Darlington pair on single chip for high gain, integrated base-emitter resistors for improved stability, and complementary NPN type TIP102. Ideal for relay and solenoid drivers, stepper motor drivers, high-current lamp and LED drivers, linear and switching power applications, and any load driving requiring high current gain from low-current logic outputs in industrial automation, automotive body electronics, and consumer appliances. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.38 |
| 50+ | $ 0.29 |
| 1000+ | $ 0.27 |
| 20000+ | $ 0.27 |
| 30000+ | $ 0.27 |
Technical Specifications
- Part No.TIP107
- RoHS ROHS3 Compliant
- Model TIP107
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Packaging Tube
- Part Status Active
- Power - Max 80 W
- Manufacturer STMicroelectronics
- Mounting Type Through Hole
- Transistor Type PNP - Darlington
- Standard Package 1000
- Base Product Number TIP107
- Operating Temperature 150°C (TJ)
- Supplier Device Package TO-220-3
- Vce Saturation (Max) @ Ib, Ic 2.5V @ 6mA, 3A
- Current - Collector (Ic) (Max) 8 A
- Current - Collector Cutoff (Max) 50 µA
- DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A, 4V
- Voltage - Collector Emitter Breakdown (Max) 100 V
