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TPH2R608NH,L1Q(M TOSHIBA Power MOSFET
The TPH2R608NH,L1Q(M is a 75V N-Channel U-MOSIX-H MOSFET in an 8-SOP Advance (5x5) package, ideal for high-efficiency, high-current switching where space is at a premium . Select this device when your design demands ultra-low typical on-resistance of just 2.1mΩ at 10V gate drive, enabling 150A continuous drain current with 142W power dissipation . Its 28nC typical switching charge and 6nF input capacitance support high-frequency operation with minimal gate drive losses . Key applications include high-efficiency DC-DC converters, switching regulators, server power supplies, and telecom power systems . It also excels in power tool motor drives, drone power systems, and industrial automation where compact, low-loss switching is critical . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.75 |
| 100+ | $ 0.62 |
| 1250+ | $ 0.58 |
| 2500+ | $ 0.55 |
| 5000+ | $ 0.53 |
Technical Specifications
- Part No.TPH2R608NH,L1Q(M
- Category Discrete > Transistors > MOSFETs (Single)
- Mfr Toshiba Semiconductor and Storage
- Series U-MOSVIII-H
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75 V
- Current - Continuous Drain (Id) @ 25°C 150A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 2.6mOhm @ 50A, 10V
- Vgs(th) (Max) @ Id 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 37.5 V
- FET Feature -
- Power Dissipation (Max) 142W (Tc)
- Operating Temperature 150°C (TJ)
- Grade -
- Qualification -
- Mounting Type Surface Mount
- Supplier Device Package 8-SOP