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ZXMN10A25GTA DIODES Power MOSFET
The ZXMN10A25GTA is an N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 100V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, and surface-mount SOT-223 package for enhanced thermal dissipation. Ideal for synchronous rectification in isolated DC-DC converters, battery management systems (BMS), load switching for power distribution, motor control, and any 100V switching application requiring low conduction losses with logic-level gate drive. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.56 |
| 100+ | $ 0.45 |
| 1000+ | $ 0.43 |
Technical Specifications
- Part No.ZXMN10A25GTA
- Model ZXMN10A25GTA
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100 V
- Current - Continuous Drain (Id) 2.5 A (Ta)
- Rds On (Max) @ Id, Vgs 0.14 Ω @ 10 V
- Power Dissipation (Max) 2 W (Ta)
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number ZXMN10A25
- RoHS ROHS3 Compliant
- Standard Package 1000