ZXMN10B08E6TA DIODES Power MOSFET

The ZXMN10B08E6TA is an N-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring 100V drain-source voltage and low on-resistance for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, logic-level gate drive compatibility, low gate charge for minimized switching losses, 100% avalanche tested for ruggedness, and operating junction temperature suitable for power applications. Features include low threshold voltage for direct drive from low-voltage logic, fast switching speed, and compact surface-mount package for space-constrained designs. Ideal for synchronous rectification in isolated DC-DC converters, battery management systems (BMS), load switching for power distribution, motor control, and any 100V switching application requiring low conduction losses with logic-level gate drive . In stock at HL Electronics – request a quote for fast delivery.