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ZXMP4A57E6QTA DIODES Power MOSFET
The ZXMP4A57E6QTA is a P-channel enhancement mode Power MOSFET from Diodes Incorporated, featuring low on-resistance and logic-level gate drive for high-efficiency switching applications. For selection, verify drain-source voltage rating, continuous drain current, on-resistance for conduction losses, gate threshold voltage for logic-level compatibility (2.5V/4.5V drive), total gate charge for switching performance, and operating junction temperature. Features include low threshold voltage for direct drive from microcontrollers, fast switching speed, 100% avalanche tested for ruggedness, and surface-mount SOT-23-6 (SOT-26) package for automated assembly. Ideal for high-side load switching and power path management, battery protection circuits, low-voltage DC-DC converters, power management in portable electronics, and any P-channel switching application requiring logic-level gate drive. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.21 |
| 100+ | $ 0.17 |
| 750+ | $ 0.15 |
| 1500+ | $ 0.14 |
| 3000+ | $ 0.14 |
Technical Specifications
- Part No.ZXMP4A57E6QTA
- Model ZXMP4A57E6QTA
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type P-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 40 V
- Current - Continuous Drain (Id) 3.7 A (Ta)
- Rds On (Typ) @ Id, Vgs 0.055 Ω @ 4.5 V
- Features ESD Protected Gate
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-23-6
- Base Product Number ZXMP4A57E6
- RoHS ROHS3 Compliant
- Standard Package 3000