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ZXMP6A17GQTA DIODES Power MOSFET

The ZXMP6A17GQTA is a 60V P-Channel enhancement-mode MOSFET in a SOT-223 package, ideal for high-side switching and load management where a compact, logic-level gate drive is essential. Select this device when your design demands a P-FET with 125mΩ Rds(on) at 10Vgs, 3A continuous drain current, and a low 1V max threshold voltage for direct 3.3V/5V MCU drive capability. Its 17.7nC gate charge enables efficient high-frequency switching. Key applications include load switches, power distribution, DC-DC converters, and battery protection circuits. It also excels in industrial automation, automotive body electronics, and motor control, with a -55°C to +150°C junction range ensuring reliability in harsh environments. In stock at HL Electronics – request a quote for fast delivery.

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Partno：ZXMP6A17GQTAEncapsulation：

Brand：DIODESParticular Year：

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Stock：33000SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.329449
Total： $ 0.33
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  • PartNoZXMP6A17GQTA
  • Category Discrete Semiconductor Products
  • Series -
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type P-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 60V
  • Current - Continuous Drain (Id) @ 25°C 3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 17.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 637pF @ 30V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 2W (Ta)
  • Rds On (Max) @ Id, Vgs 125 mOhm @ 2.2A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package SOT-223
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