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ZXTN2007GTA DIODES Bipolar (BJT)
The ZXTN2007GTA is an NPN bipolar power transistor from Diodes Incorporated, featuring high current capability and low saturation voltage for switching applications. For selection, verify collector-emitter voltage rating, continuous collector current, VCEsat for low conduction losses, DC current gain (hFE) characteristics, transition frequency for switching speed, and operating junction temperature suitable for power applications. Features include low saturation voltage for high efficiency, fast switching speed, and surface-mount SOT-223 package for automated assembly. Ideal for relay and solenoid drivers, DC-DC converters, switching regulators, power management in industrial equipment, and any switching application requiring NPN transistor with high current capability and low VCEsat . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.30 |
| 50+ | $ 0.23 |
| 1000+ | $ 0.21 |
Technical Specifications
- Part No.ZXTN2007GTA
- Model ZXTN2007GTA
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 3 A
- Voltage - Collector Emitter Breakdown (Max) 100 V
- Vce Saturation (Max) @ Ib, Ic 180 mV @ 500 mA, 5 A
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500 mA, 5 V
- Power - Max 3 W
- Frequency - Transition 130 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number ZXTN2007
- RoHS ROHS3 Compliant
- Standard Package 1000