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ZXTN2010GTA DIODES Transistors - Bipolar (BJT) - Single
Partno：ZXTN2010GTAEncapsulation：
Brand：DIODESParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.318871
Total：
$ 0.32
Other Platform Purchase Links： No Data
- PartNoZXTN2010GTA
- Category Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single
- Series -
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 6A
- Voltage - Collector Emitter Breakdown (Max) 60V
- Vce Saturation (Max) @ Ib, Ic 260mV @ 300mA, 6A
- Current - Collector Cutoff (Max) 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 1V
- Power - Max 3W
- Frequency - Transition 130MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223