> Goods Details Page
> ZXTN25100DGTA
ZXTN25100DGTA DIODES Bipolar (BJT)
The ZXTN25100DGTA is an NPN bipolar power transistor from Diodes Incorporated, featuring 100V collector-emitter voltage and high current capability for switching applications. For selection, verify collector-emitter saturation voltage for low conduction losses, DC current gain (hFE) characteristics, transition frequency for switching speed, power dissipation with proper PCB copper area, and operating junction temperature suitable for power applications. Features include low saturation voltage for high efficiency, fast switching speed, and surface-mount package for automated assembly. Ideal for relay and solenoid drivers, DC-DC converters, switching regulators, power management in industrial equipment, and any switching application requiring NPN transistor with high current capability and low VCEsat in SOT-223 package . In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.26 |
| 50+ | $ 0.20 |
| 1000+ | $ 0.18 |
| 20000+ | $ 0.18 |
| 30000+ | $ 0.18 |
Technical Specifications
- Part No.ZXTN25100DGTA
- Model ZXTN25100DGTA
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT)
- Manufacturer Diodes Incorporated
- Packaging Tape & Reel (TR)
- Part Status Active
- Transistor Type NPN
- Current - Collector (Ic) (Max) 4 A
- Voltage - Collector Emitter Breakdown (Max) 100 V
- Vce Saturation (Max) @ Ib, Ic 210 mV @ 200 mA, 2 A
- DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 1 A, 5 V
- Power - Max 2 W
- Frequency - Transition 130 MHz
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package SOT-223
- Base Product Number ZXTN25100
- RoHS ROHS3 Compliant
- Standard Package 1000