AOD2810 AOS Power MOSFET
The AOD2810 from Alpha & Omega Semiconductor is an 80V N-channel MOSFET purpose-built for high-power-density applications, delivering ultra-low conduction losses and robust switching performance. For selection, it combines an extremely low 8.5mΩ max on-resistance at 10V with 46A continuous drain current at case temperature, plus excellent avalanche capability and high current handling. A gate threshold of 3.4V max enables direct logic drive, while 38nC gate charge and 1871pF input capacitance ensure fast, efficient switching across a wide -55°C to 175°C range. In application, it excels in DC-DC converters, synchronous rectification, load switching, and POL modules for computing, telecom, and networking equipment. It is equally suited for motor drives with various power switching applications, supporting compact designs within the DPAK surface-mount package. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 100+ | $ 0.35 |
| 1250+ | $ 0.31 |
| 2500+ | $ 0.29 |
| 37500+ | $ 0.29 |
| 50000+ | $ 0.29 |
Technical Specifications
- Part No.AOD2810
- Series -
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±25V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3.4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 8.5 mOhm @ 20A, 10V
- Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
- Supplier Device Package TO-252, (D-Pak)
- Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
- Drain to Source Voltage (Vdss) 80V
- Input Capacitance (Ciss) (Max) @ Vds 1871pF @ 40V
- Current - Continuous Drain (Id) @ 25°C 10.5A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
