BAT6302VH6327XTSA1 Infineon RF

The BAT6302VH6327XTSA1 from Infineon is a low-barrier silicon Schottky diode optimized for high-frequency, low-voltage signal processing. For selection, its key advantage is an ultra-low junction capacitance of typically 0.85pF at 0.2V, which minimizes signal distortion in fast-switching RF and microwave circuits. The low forward voltage drop ensures efficient rectification of small AC signals down to a few millivolts. Rated for 3V peak reverse voltage and 100mA forward current, it is specifically designed for low-power, high-sensitivity applications where preserving weak signal integrity is paramount. Its 100mW power dissipation and miniature SC-79 package suit dense surface-mount layouts. In application, it excels as an RF detector and mixer in wireless receivers, a high-speed clamping diode for data lines, and a sampling element in radar and sensor circuits. It's ideal for test and measurement equipment, medical diagnostic instruments, and battery-powered IoT devices where precise signal detection and low-loss rectification at microwave frequencies are essential. In stock at HL Electronics – request a quote for fast delivery.