BFP640H6327XTSA1 Infineon Discrete Semiconductor Products

The BFP640H6327XTSA1 is a high-performance NPN SiGe:C RF transistor in a SOT343 package, ideal for low-noise, high-linearity applications up to 6GHz. Select this device when your design demands an ultra-low noise figure (0.65dB at 1.8GHz) and high 12.5dB gain with 50mA collector current capability. Its 40GHz transition frequency and 200mW power dissipation suit demanding RF front-ends. Key applications include GPS/GLONASS/Galileo LNA stages, satellite radio (SDARS), DAB receivers, WLAN/WiFi access points, and 2.4GHz ISM band devices. It also excels in Bluetooth modules, cordless phones, and telecommunications infrastructure where exceptional signal-to-noise ratio and robust performance up to 150°C junction temperature are critical. In stock at HL Electronics – request a quote for fast delivery.